MOSFET器件并联实验研究  

Experimental Study on Parallel Connecting of MOSFETs

作　　者：张良[1] 黄子平[1] 刘承俊[1] 章林文[1] 

机构地区：[1]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《通信电源技术》2007年第6期5-7,11,共4页Telecom Power Technology

摘　　要：采用图腾柱的驱动方式,设计了应用于IXYS公司的功率MOSFET器件DE375-102N12的驱动电路。单个开关在多脉冲下具有良好的脉冲一致性。以该功率MOSFET器件进行的6个并联实验说明,影响并联的MOSFET的动态均流的主要参数是放电回路中的回路电感和寄生电感,电路板的布局与布线对并联的功率MOSFET有很大的影响,良好的布局可以大大提高电路的性能。A driver circuit for RF power MOSFET DE375 102N12 of IXYS Company is designed. Good time consistency performance in multi - pulses test is obtained on single power MOSFET circuit. In experiments of 6 MOSFETs in parallel connection, we concluds that loop inductance and parasitic inductance in power loop are the most important parameters that affect the dynamic current in parallel MOSFETs. Good layout design and route rule in print circuit board （PCB） design can greatly improve the performance in parallel connection of power MOSFETs.

关 键 词：并联 兆赫兹重复频率 MOSFET 固体开关 

分 类 号：TN386[电子电信—物理电子学]