基于失效机理的半导体器件寿命模型研究  

Research on Lifetime Models of Semiconductor Devices Based on Failure Mechanism

作　　者：赵霞[1] 吴金[1] 姚建楠[1] 

机构地区：[1]东南大学无锡分校,江苏无锡214000

出　　处：《电子产品可靠性与环境试验》2007年第6期15-18,共4页Electronic Product Reliability and Environmental Testing

摘　　要：微电子技术的发展使得集成电路的可靠性愈来愈重要,为了在较短的时间内得到产品可靠性数据,使用加速寿命试验是十分有效的方法。而使用加速寿命试验进行可靠性分析,关键是能够得到合适的寿命模型。不同的失效机理对器件寿命的影响是不同的。详细考虑了半导体器件的3个主要失效机理:电迁移、腐蚀和热载流子注入的影响因素,介绍了相应的寿命模型,并且通过具体的数据计算所得到的加速因子,对半导体器件在不同状态下的寿命情况进行了比较。The progress of microelectronics makes the reliability of ICs more and more important. To obtain reliability data in a short period, it is useful to use accelerated life testing （ALT） . Using ALT to analyze reliability, an appropriate life model is the key. Different failure mechanisms have different impacts on the lifetimes of devices. In the paper, three main failure mechanisms and their life models are discussed in detail, including electromigration, corrosion and hot carrier injection. The microelectronic acceleration factors are calculated based on practical data. The lifetimes of devices under different situations are compared.

关 键 词：半导体器件 加速寿命试验 失效机理 

分 类 号：TN303[电子电信—物理电子学]