AlGaAs/GaAs 单片集成激光发射机  

AlGaAs/GaAs monolithic integrated laser transmitter

作　　者：胡礼中[1,2] 刘式墉[1,2] 

机构地区：[1]大连理工大学物理系 [2]吉林大学电子工程系

出　　处：《大连理工大学学报》1997年第5期512-515,共4页Journal of Dalian University of Technology

基　　金："八六三"国家重点科技攻关项目

摘　　要：报道一种新型ＡｌＧａＡｓ／ＧａＡｓ单片集成激光发射机．这种器件利用液相外延生长中的伴生高阻层，解决了半导体激光器与场效应晶体管驱动电路的工艺共容性问题，具有场效应晶体管与激光器结构同时形成且二者表面自动找平、制作简单的优点．初步测量结果表明，无致冷条件下器件的３ｄＢ小信号调制带宽至少为２７０ＭＨｚ．A novel AlGaAs/GaAs monolithic integrated laser transmitter is fabricated. This device makes use of a high resistivity companion layer found in LPE(Liquid Phase Epitaxy) to solve the processing compatibility problem between LD and FET driving unit. The advantages of this device are that the structures of FET and LD grow up in the same epitaxial run and their surfaces can automatically level. It simplifies the fabrication process. The device's 3 dB small signal modulation bandwidth is at least 270 MHz at no cooling.

关 键 词：砷化镓 激光发射机 镓铝砷化合物 半导体激光器 

分 类 号：TN248.4[电子电信—物理电子学]