串列加速器-离子注入机-透射电镜联机系统的建立  

Construction of Tandem-Implanter-TEM Interface System

作　　者：郭立平[1] 刘传胜[1] 黎明[1] 宋搏[1] 叶明生[1] 付德君[1] 范湘军[1] 

机构地区：[1]武汉大学物理学院加速器实验室,湖北武汉430072

出　　处：《原子能科学技术》2007年第6期648-652,共5页Atomic Energy Science and Technology

基　　金：国家自然科学基金重点项目(10435060)

摘　　要：建立了由2×1．7MV串列加速器、200kV离子注入机、H800型透射电子显微镜和联机传输系统组成的我国第1套串列加速器-离子注入机-透射电子显微镜联机装置。对主要设备进行了改造，并采取有效措施解决了联机装置的隔震问题。2台加速器和所有的真空泵都运行时，电镜仍可正常工作，观察到的图像质量不受振动影响。电镜室内样品倾斜角最大可达52°以上，离子注入不影响电镜观测，可进行离子注入的原位和实时结构研究。离子注入机输出的115keV氮离子在电镜入口测得的束流强度达100～180nA。初步实验已原位观察到氮离子注入导致单晶硅非晶化的过程，显示这套装置具有离子注入条件下的原位观测能力。The first tandem-implanter-TEM interface system in China, consisting of a 2×1.7 MV tandem accelerator, a 200 kV ion implanter, a H800 transmission electron microscope （TEM） and the beam transport system, was established recently. Improvements on the component facilities were made, and effective steps were taken to minimize mechanical vibration transmission from the ion beam line to the TEM. No obvious wobbling of the TEM image was observed, showing that the TEM works normally while the tandem and the implanter as well as the vacuum pumps are in operation. Under the tilting angle of up to 52° of the sample relative to the ion beam, the TEM observation was not affected by the ion implantation, meaning that in situ and real time study on the implantation could be carried out. For 115 keV nitrogen ion beam output from the implanter, the current measured at the entrance of the TEM is 100-180 nA. The amorphization process of Si crystal irradiated by nitrogen ion beam was observed in the primary experiments, demonstrating that this interface facility is capable of in-situ study during the implantation.

关 键 词：原位透射电子显微镜 加速器 联机装置 离子注入 

分 类 号：TL52[核科学技术—核技术及应用]