肖特基二极管整流的计算与测量  

Theoretical and experimental analysis of Schottky barrier diode rectification

作　　者：黄建仁[1] 王秩雄[1] 陈绳乾[1] 王挺[1] 

机构地区：[1]空军工程大学电讯工程学院,西安710077

出　　处：《强激光与粒子束》2007年第11期1887-1890,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金资助课题(60471033)

摘　　要：提出了改进型的肖特基二极管整流数理模型,用加速迭代法和四阶精度龙格-库塔法编制了计算程序,并结合实验测量得到了整流效率与输入功率、频率和负载等关系曲线:负载一定时,输入功率从零开始增大,整流效率先快速上升,然后上升趋势变缓;输入功率一定时,负载从零开始增大,整流效率先增大后减小,对于某一固定的输入功率,存在着一个最佳负载值;当输入功率和负载都相同时,降低工作频率,整流效率上升。型号为2DV10B的X波段管子在负载为525Ω、输入功率为10 mW、频率为3.2 GHz时获得的整流效率为75.2%;频率为10 GHz时获得50.2%的效率,实验测量结果与理论分析一致。This paper presents an improved Schottky barrier diode model, develops a computational program in which the Rung-Kutta method with 4-order accuracy and the iterative method are used, and obtains the graphics of the conversion efficiency. With the same load, as the input power increases from zero, the conversion efficiency increases fast at the lower input power level, and the diode can work at a high conversion efficiency over a broad power range. With the same input power, as the resistance increases from zero, the conversion efficiency increases to the maximum before decreasing, and each input power level corresponds to one optimum resistance. For the same input power and load, the diode conversion efficiency increases by decreasing the operating frequency. A microwave to DC conversion efficiency of 75.2% was achieved using the 2DV10B X-band Schottky barrier diode at 3.2 GHz and that of 50.2% was achieved at 10.0 GHz. The theoretical analysis shows that the theoretical results agree well with the experimental results.

关 键 词：肖特基二极管 接收整流天线 微波输电 无线输电 太阳能电站 

分 类 号：TN35[电子电信—物理电子学]