薄外延层RESURF LDMOS完全耐压模型  

A Full Breakdown Model of Thin Epitaxial RESURF LDMOS

作　　者：李琦[1] 张波 李肇基[1] 

机构地区：[1]电子科技大学 IC 设计中心,成都610054

出　　处：《固体电子学研究与进展》2007年第4期540-544,共5页Research & Progress of SSE

摘　　要：提出硅基薄外延RESURF LDMOS不全耗尽和完全耗尽的完全耐压模型。基于求解二维Poisson方程,获得该结构二维表面电场和击穿电压的完整解析表达式。借助此模型研究击穿电压与器件结构参数、外延层掺杂浓度和衬底掺杂浓度的关系;在满足最优表面电场和完全耗尽条件下,得到器件优化的RESURF判据。解析结果、MEDICI数值结果和实验结果吻合较好,验证了模型的准确性。A full analytical breakdown model for thin epitaxial RESURF LDMOS is presented in this paper. Based on the 2-D Poisson equation, the derived model gives the solutions of the surface field distributions and breakdown voltage of completely-depleted and partially-depleted LDMOS. Based on this model we calculate the influence of all design parameters on breakdown voltage. Under condition of optimal surface electrical field and depleted completely, the RESURF condition is obtained. All analytical results are well verified by the numerical analysis of MEDICI and experiment.

关 键 词：薄外延 完全 击穿电压 模型 

分 类 号：TN432[电子电信—微电子学与固体电子学]