热敏材料掺磷非晶硅的退火行为  

Influence of annealing on phosphor-doped hydrogenated amorphous silicon as thermal sensitive material

作　　者：马铁英[1,2] 李铁[1] 周萍[1] 刘文平[1,2] 王跃林[1] 

机构地区：[1]中国科学院微系统与信息技术研究所传感技术国家重点实验室,微系统技术国家实验室 [2]中国科学院研究生院,北京100039

出　　处：《功能材料与器件学报》2007年第6期588-592,共5页Journal of Functional Materials and Devices

基　　金：国家973项目"基于碳纳米管敏感结构与传感器"(No.2006CB300406);上海AM基金"基于闪耀光栅MEMS红外光谱仪技术研究"(No.0402)

摘　　要：本文对PECVD制备的红外热敏材料掺磷非晶硅薄膜的两个关键热电参数-红外吸收系数和电阻温度系数-采用红外透射谱、拉曼谱和电阻率测量进行了深入的研究。实验结果表明,对样品进行退火30 min后,薄膜结构可以达到稳定;随着退火温度的增加,样品的红外透射率下降;当退火温度达到700℃时,薄膜完全晶化;与此同时,电阻率和电阻温度系数随掺杂浓度和退火温度的增加而减小。根据Lu的模型,对这些现象进行了解释并给出了制备和退火的优化条件。The infrared absorption and TCR of a - Si with different phosphor doping ratio were investigated by means of FTIR spectra , Raman scattering spectra and resistivity measurement. The results showed that, after annealing for 30 minutes , the film became stable, and its infrared transmittance was decreased with the annealing temperature increment. With an annealing temperature of 700 ℃ , the film turned to complete crystallization, while the resistivity and TCR decreased when the doping concentration and annealing temperature increased. All the results were explained by employed the Lu＇s model and the optimum preparation and annealing condition are concluded.

关 键 词：非晶硅 退火 红外 电阻温度系数 

分 类 号：TN304.12[电子电信—物理电子学]