氮化制度对Si-Al-Al_2O_3体系合成Sialon的影响  

Effect of Nitridation Schedule on the Synthesis of Sialon in Si-Al-Al_2O_3 System

作　　者：袁志丽[1] 尹洪峰[1] 张军战[1] 任耘[1] 刘小团[1] 马啸尘[1] 袁蝴蝶[1] 

机构地区：[1]西安建筑科技大学材料学院,西安710055

出　　处：《硅酸盐通报》2007年第6期1189-1192,1201,共5页Bulletin of the Chinese Ceramic Society

摘　　要：以SiC、α-Al2O3微粉、Si粉、Al粉为原料,在1450℃流动氮气中制备Sialon/SiC材料。研究了不同温度保温氮化对Sialon合成的影响。研究结果表明:有部分硅粉残余没有氮化;在1100℃保温氮化的氮化率高于在1150℃、1200℃保温氮化;1100℃保温氮化,残余Si量少、分布均匀,残余硅熔聚现象较轻,利于Sialon的合成。Sialon/SiC composites were prepared at 1450℃ in flowing nitrogen atmosphere by using SiC particles, α-Al2O3 microfine, Si powder and Al powder as starting/raw materials. The effect of nitridation schedule on the synthesis of Sialon was investigated. The results show： A little of silicon powders is not nitrided. The ratio of nitridation of the samples nitrided at 1100℃ （2h） is higher than at 1150℃（2h） and 1200℃（2h）. At 1100℃ the content of residual silicon is the lowest and most homogeneous,and the agglomeration of residual silicon is least. It is suitable to synthesize Sialon when silicon is nitrided at 1100℃.

关 键 词：SIALON 氮化制度 残余si 

分 类 号：TQ174.758[化学工程—陶瓷工业]