基于BSIM3模型的毫米波MOS变容管建模  

Millimeter-Wave MOS Varactor Modeling Based on BSIM3 Model

作　　者：夏立诚[1] 王文骐[1] 胡嘉杰[1] 

机构地区：[1]上海大学通信与信息工程学院,上海200072

出　　处：《微电子学》2007年第6期833-837,共5页Microelectronics

基　　金：上海-应用材料研究与发展基金资助项目(0506)

摘　　要：提出了应用于毫米波段的MOS变容管的建模方法。针对标准0.18μm CMOS工艺,采用2D器件仿真软件MINIMOS,设计实现了积累型MOS变容管;并提出和分析了基于标准BSIM3模型的MOS变容管的等效电路模型;通过MINIMOS仿真,直接提取电路模型各寄生参数。该模型能方便地在电路设计软件中实现,并能预测最高达40 GHz频率范围内的变容管特性。A modeling methodology for MOS varactor was presented for applications at millimeter-wave frequencies. The MOS varactor was designed and implemented in MINIMOS with standard 0. 18/lm CMOS process and an equivalent circuit model based on the standard BSIM3 model card was presented and discussed. Parasitic parameters of the circuit model are extracted directly from simulation in MINIMOS. The model, which can be easily implemented in circuit design software, is capable of predicting varactor behavior at high frequencies up to 40 GHz.

关 键 词：毫米波 CMOS 建模 MOS变容管 BSIM3 

分 类 号：TN386[电子电信—物理电子学]