Cd_(0.80)Zn_(0.20)Te晶体的生长及性能研究  

Study on the Crystal Growth and Properties of Cd_(0.80)Zn_(0.20)Te

作　　者：方军[1] 赵北君[1] 朱世富[1] 何知宇[1] 高德友[1] 张冬敏[1] 程曦[1] 王智贤[1] 

机构地区：[1]四川大学材料学院,成都610064

出　　处：《人工晶体学报》2007年第6期1293-1296,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.60276030);教育部博士点基金(No.20020610023)

摘　　要：用本实验室合成的Ca0．80Zn0．20Te多晶料为原料，采用改进的布里奇曼法在镀碳和未镀碳的石英安瓿中生长出Ca0．80Zn0．20Te晶锭。使用X射线衍射仪对合成产物及晶锭进行了分析，生长晶体的X射线衍射峰尖锐，摇摆谱对称，表明晶锭的结晶性能较好；用IRPrestige-21红外光谱仪分析了晶体的红外透射光谱，测试结果表明安瓿镀碳后生长的晶体位错密度小，均匀性较好，电阻率优于未镀碳安瓿生长的晶体；晶体的蚀坑密度在10^3-10^4cm^-2之间，比未镀碳安瓿生长的晶体低1个数量级。Ca0.80Zn0.20Te ingots respectively, by modified Bridgman were grown in quartz ampoule with and without carbon coating, method using high purity Ca0.80Zn0.20Te polycrystals as initial material synthesized by our laboratory. The X-ray diffraction spectra showed that the integrality of the crystals was good. The infrared spectrum was obtained by Prestige-21 Fourier Transform Infrared Spectrometer. The result of infrared spectrum showed that the transmittance of the crystals grown in ampoule with carbon coating was better than those grown without carbon coating. The I-V curve showed that the former resistivity was higher. The photos of the etch pits showed that the EPD of the crystal without coating carbon was 10^5cm^-2, and the EPD of the crystal with coating carbon was 10^3-10^4cm^-2.

关 键 词：碲锌镉 晶体生长 XRD 红外光谱 蚀坑密度 

分 类 号：O782[理学—晶体学]