逆压电极化效应对AlGaN/GaN异质结2DEG特性的影响  

Effects of Inverse Piezoelectric Polarization on 2DEG in AlGaN/GaN Heterostructure

作　　者：李若凡[1] 武一宾[2] 马永强[1] 张志国[2] 杨瑞霞[1] 

机构地区：[1]河北工业大学,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第1期56-58,72,共4页Semiconductor Technology

基　　金：国家973项目(51327030402)

摘　　要：从正-逆压电极化效应对GaN材料的影响出发，通过自洽求解一维Poisson-Schrtidinger方程，研究了逆压电极化效应对AlGaN／GaN异质结中2DEG浓度的影响。计算结果显示，逆压电极化明显影响2DEG性质，当Al组分x=0．3，AlGaN层厚度为20nm时，不考虑逆压电极化，2DEG浓度为1．53×10^13cm^-2；当等效外加电压分别为10和15v时，2DEG浓度降低至1．04×10^13cm^-2和0．789×10^13cm^-2，可见当等效外电压由0～15V变化时，2DEG浓度下降了48．4％。The inverse piezoelectric polarization （IPP） in AlGaN/GaN heterostructure was presented. Effects of IPP on 2DEG in AlGaN/GaN heterostructure were investigated through the self-consistent solution of 1-D Poisson-Schrfdinger equations. The results show IPP has great influence on 2DEG. The density of 2DEG is 1.53 × 10^13cm^- 2 at the Al-content of 0.3 and the thickness of 20 nm with IPP being neglected; the density was 1.04 × 1013 and 0.789 × 10^13cm^-2 respectively while the voltage was 10 and 15 V. It was clear that the 2DEG density reduced 48.4% with the voltage increasing from 0 to 15 V and the IPP considered.

关 键 词：氮化镓 Poisson-Schrfidinger方程 逆压电极化效应 2DEG浓度 

分 类 号：TN304.054[电子电信—物理电子学] TN325.3