M/a-Si:H肖特基势垒参数的测量  

THE EXPERIMENTAL STUDY OF M/A-SI:H SCHOTTKEY BARRIER PARAMETERS

作　　者：张治国[1] 宿昌厚[2] 

机构地区：[1]内蒙古工业大学 [2]北京工业大学

出　　处：《应用科学学报》1997年第2期187-192,共6页Journal of Applied Sciences

摘　　要：介绍在中性区光电导调制下实现用高频C-V仪测量M／a-Si：H肖特基势垒参数的方法，把所测结果与其他方法测量值作了比较．对Al/a-Si：H势垒异常现象也进行了描述．An experiment technique is introduced to modulate the neutral bulk region of M/a-Si:H system with light, and to measure the barrier characteristics of M/a-Si:H junction with high frequency O-V meter. The results obtained and available data from literatures arc compared. With much emphasis, the unusual phenomenon in Al/a-Si: H structure is described.

关 键 词：硅 带隙结构 肖特基势垒参数 测量 

分 类 号：TN304.12[电子电信—物理电子学]