化学水浴法制备ZnS薄膜  

ZnS thin films prepared by chemical bath deposition

作　　者：孟飞[1] 张谷一[1] 何建平[1] 朱洁[1] 

机构地区：[1]北京科技大学新金属材料国家重点实验室,北京100083

出　　处：《电源技术》2007年第12期998-999,1011,共3页Chinese Journal of Power Sources

基　　金："422高层次人才创新工程"基金资助项目(00007411)

摘　　要：采用了化学水浴法制备异质结薄膜太阳电池中的窗口层ZnS薄膜。尝试了酸性溶液制备ZnS薄膜,讨论了溶液成分、水浴时间和温度对薄膜成分和形貌的影响。研究结果表明在75℃,6h条件下沉积得到的薄膜最平整,成分最符合化学计量比,退火后薄膜主要为纤锌矿结构的ZnS相。ZnS films used as buffer layers in thin film solar cells are usually deposited by chemical bath deposition using alkaline solution. In this work ZnS thin films were deposited in acidic solution. Experiments were carried out to determine the optimum conditions for producing uniform films, free from pinholes. Data of deposition conditions that affected the physical properties were reported.

关 键 词：ZNS薄膜 化学水浴法 窗口层 

分 类 号：TM914.4[电气工程—电力电子与电力传动]