直流磁控溅射研究进展  

Research Advance of Direct Current Magnetron Sputtering

作　　者：石永敬[1,2] 龙思远[1] 王杰 潘复生[4] 

机构地区：[1]重庆大学机械学院 [2]重庆硅酸盐研究所,重庆,401120 [3]重庆硅酸盐研究所 [4]重庆大学材料学院

出　　处：《材料导报》2008年第1期65-69,共5页Materials Reports

基　　金：重庆市科技攻关项目;重庆大学研究生院创新基金重点项目(200609Y180060165)

摘　　要：直流磁控溅射是重要的物理气相沉积技术,广泛应用在工业生产和科学研究中。主要评论了近年来直流磁控溅射技术在溅射机理和非平衡闭合磁控靶等方面取得的重要进展,并评述了脉冲磁控模式和基于闭合磁场直流磁控溅射沉积涂层的结构区域模型。直流非平衡磁控溅射是直流磁控溅射技术中的重要里程碑,使磁控溅射技术直接过渡到离子镀阶段,而脉冲磁控溅射技术为稳定沉积高质量的非导电涂层作出了重要的贡献。It is an important physical vapor deposition technology that the direct current magnetron sputtering is widely applied in industry product and science research. In this paper, it mainiy discusses that in recent years the direct current magnetron sputtering have obtained an important advance in the sputtering mechanism and unbalanced closed field magnetron areas,and reviews the pulsed magnetron and structure zone model of coatings deposited by the closed field unbalance direct current magnetron sputtering. It is an important milestone that the sputtering technology has directly changed from magnetron sputtering to ion plating, and the research of the pulsed magnetron sputtering technology is a significant contribution for deposition insulation coatings of high performance.

关 键 词：磁控溅射 非平衡闭合磁场 脉冲 薄膜结构 

分 类 号：TB43[一般工业技术]