双有源区隧道再生半导体激光器温度场分布研究  

Temperature Distribution Analysis of Tunnel Regeneration Semiconductor Laser with Two Active Regions

作　　者：张蕾[1] 崔碧峰[1] 黄宏娟[1] 郭伟玲[1] 王智群[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子技术实验室

出　　处：《半导体光电》2007年第6期761-765,共5页Semiconductor Optoelectronics

基　　金：国家"973"计划资助项目(2006CB604902);国家"863"计划项目(2004AA311030);国家自然科学基金项目(60506012);北京市科委重点项目(D0404003040221);北京市教委项目(kz200510005003);北京市人才强教计划项目(05002015200504)

摘　　要：针对隧道再生半导体激光器,建立了内部的热源分布模型,分析了三种封装方式对芯片内部温度分布的影响;模拟结果表明加电后几微秒的时间内,芯片内温度场分布主要由隧道再生结构的热特性决定,与封装形式关系不大;在几微秒到几十或一百毫秒的时间范围内,有源区的温度上升很快;几百毫秒以后,器件温度达到稳态,有源区的平衡温度主要决定于载体的散热特性。稳态时靠近衬底的有源区温度高于靠近热沉的有源区的温度,但两有源区的温差很小,芯片内最高温度出现在靠近衬底有源区的脊形中心。Heat source distribution of tunnel regeneration semiconductor laser has been presented. Temperature distribution changes caused by three different sink packagings were discussed. It is found that in the range before several microseconds the temperature increase is small and nearly exclusively determined by the thermal properties of the diode chip. In the range between several microseconds and some ten to hundred milliseconds the temperature of the active regions increases significantly. At some hundred milliseconds a steady-state thermal distribution is nearly reached. This temperature is predominantly determined by the heat sink thermal properties. The steady-state temperature distribution present that temperature of the active region close to the substrate is higher than that of the active region close to the heat sink and the highest temperature is in its center.

关 键 词：半导体激光器 二维温度分布 瞬态 稳态 隧道再生 封装 

分 类 号：TN248.4[电子电信—物理电子学]