C_(60)作为石英衬底过渡层气相生长金刚石薄膜  

Diamond Nuclei on C_60 Intermediatc Layer of SiO_2 Substrate by Chemical Vapor Deposition

作　　者：杨国伟[1] 刘大军 何金田 张兵临 毛友德[3] 

机构地区：[1]湘潭大学物理系,411105 [2]河南省基础与应用科学研究所 [3]合肥工业大学

出　　处：《金刚石与磨料磨具工程》1997年第4期5-7,共3页Diamond & Abrasives Engineering

基　　金：湖南省自然科学基金;河南省基础与应用科学研究所的部分资助

摘　　要：本文采用微波等离子体化学气相沉积方法（MWPCVD），以C60膜作为过渡层，在石英（StO2）衬底表面，首次在等离子体预处理中无衬底负偏压条件下生长出金刚石晶粒。通过扫描电镜观察到金刚石晶粒呈菜花关，生长表面为（100）晶面。It is difficult to achieve diamond nuclei on SiO2 substrate surface by chemical vapor deposition. In this paper, a new method for diamond nuclei on SiO2 surface using C60 films as the infermediate layers has been described. High quality diamond grains have been deposited on SiO2 surface without higher substrates negative bias of the pretreatment (prior to diamond growth) by microwave plasma chemical vepor deposition. The diamond grains of the deposited films are cauliflower-like small crystallin aggregates, and the surface morphologies of the deposited films are mainly diamond (100) facesunder SEM.

关 键 词：石英 过渡层 金刚石薄膜 碳60 MWPCVD 

分 类 号：TQ163[化学工程—高温制品工业] TB43[一般工业技术]