掺硼四面体非晶碳膜的微观结构及光谱表征  

Spectroscopic Characterization of Boron Doped Tetrahedral Amorphous Carbon

作　　者：张化宇[1] 檀满林[1] 韩杰才[1,2] 朱嘉琦[3] 贾泽纯[3] 

机构地区：[1]哈尔滨工业大学深圳研究生院 [2]哈尔滨工业大学复合材料与结构研究所,哈尔滨150001 [3]哈尔滨工业大学复合材料与结构研究所

出　　处：《无机材料学报》2008年第1期180-184,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(50602012)

摘　　要：分别采用过滤阴极真空电弧技术制备了不同含硼量四面体非晶碳(ta-C:B)膜,并用X射线光电子能谱(XPS)、Raman光谱对薄膜的微观结构和化学键态进行了研究.XPS分析表明薄膜中B主要以石墨结构形式存在,随着B含量的增加,sp^3杂化碳的含量逐渐减小,Ta-C:B膜的Raman谱线在含硼量较高时,其D峰和G峰向低频区偏移,且G峰的半峰宽变窄,表明B的引入促进了sp^2杂化碳的团簇化,减小了原子价键之间的变形,从而降低了薄膜的内应力.A set of boron doped tetrahedral amorphous carbon （ta-C：B） films were prepared in a filtered cathodic vacuum arc system using boron mixed graphite as targets with weight percentage ranging from 0 to 15%. The chemical bonding states of ta-C：B were studied by X-ray photoelectron spectroscope. The result shows that B is mainly threefold coordinated and the fraction of sp^3 hybridized carbon decreases in magnitude with increasing boron content. Raman analysis also shows that the introduction of B in the ta-C：B films facilitates the clustering of sp^2 carbon sites which reduces the bonding distortion and intrinsic stress of the films.

关 键 词：四面体非晶碳(ta-C) XPS RAMAN光谱 

分 类 号：TB30[一般工业技术—材料科学与工程]