CdZnTe晶体生长中掺In量对晶体电学性能的影响  

Effects of In Dopant Concentration on the Electrical Properties of CdZnTe Crystal

作　　者：袁铮[1] 桑文斌[1] 钱永彪[1] 刘洪涛[1] 闵嘉华[1] 滕建勇[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《无机材料学报》2008年第1期195-198,共4页Journal of Inorganic Materials

基　　金：国家自然科学基金(60676002);上海市重点学科建设项目(T0101)

摘　　要：通过在富Te环境下生长In掺杂CdZnTe晶体,实验研究了不同掺In量对晶体电学性能的影响,重点讨论了不同掺In量与晶体电阻率、载流子浓度及迁移率之间的关系.并对CdZnTe晶体中In掺杂的补偿机理进行了分析探讨.结果表明,当In掺杂量为5×10^(17)cm^(-3)时,得到了电阻率达1.89×10^(10)Ω·cm的高阻CdZnTe晶体.CdZnTe crystal was grown with different In dopant concentration in excess Te atmosphere. The relation between In dopant concentration and resistivity, carrier concentration, mobility of the CdZnTe crystal was investigated. In addition, In-doped compensation mechanism in CdZnTe crystal was also discussed. Results show that the high resistivity of CdZnTe crystal obtained is 1.89×10^10Ω·cm when the In dopant concentration is at the level of 5×10^7cm^-3.

关 键 词：核探测器 CDZNTE In掺杂 电学性能 

分 类 号：TN304[电子电信—物理电子学]