电化学制备薄黑硅抗反射膜  

"Black silicon" antireflection thin film prepared by electrochemical etching

作　　者：刘光友[1] 谭兴文[1] 姚金才[1] 王振[1] 熊祖洪[1] 

机构地区：[1]西南大学物理科学与技术学院,重庆400715

出　　处：《物理学报》2008年第1期514-518,共5页Acta Physica Sinica

基　　金：教育部科学技术研究重点项目(批准号:105145);教育部新世纪优秀人才支持计划(批准号:NCET-05-0772);西南大学科技基金(批准号:SWNUB2005030)资助的课题~~

摘　　要：采用计算机控制电流密度按指数规律衰减对单晶硅进行电化学腐蚀,得到了折射率随薄膜厚度连续均匀变化的抗反射膜,即黑硅样品.这种在制取上快速、经济和工艺非常简单的样品,不仅在较宽波段范围内反射率小于5%,且整个薄膜厚度不足1μm.利用传输矩阵方法对黑硅样品的反射谱进行模拟,得到了理论与实验符合较好的结果.Solar cells and optical detection devices are often covered with antireflective surfaces to enhance their performance. An economical, fast, and easily operational electrochemical etching technique has been developed to realize a continuous uniform variation in the refractive index of porous silicon layer as a function of the etching depth. By using this technique a black silicon sample was fabricated, which has a reflectance below 5 % over a broad band and a thickness below 1μm. The depression mechanism of the optical reflectance is analyzed by simulating the structure with the transfer matrix method. The simulated results give a good agreement with the experimental measurements.

关 键 词：多孑L硅 折射率 抗反射膜 黑硅 

分 类 号：O484[理学—固体物理]