半导体器件工作温度的光学干涉测量  

Measurement of the Working Temperature of Semiconductor Devices with Optic Interferometry

作　　者：李丽华[1] 鲁强[1] 

机构地区：[1]华中理工大学光电子工程系

出　　处：《华中理工大学学报》1997年第6期27-29,共3页Journal of Huazhong University of Science and Technology

基　　金：国防预研基金

摘　　要：采用光学干涉测温原理测量微电子器件在线工作温度，设计了干涉测温系统，进行了实际测量实验，并与红外微像仪的测量结果进行了比较．The drawbacks of conventional thermal measuring techniques are discussed and thermometry based on the principle of optic interferometry is proposed for on line measurement of the working temperature of the power semiconductor device. A practical system has been designed and a comparison between the experimental results obtained by the method developed and those with IR micro imager shows that the method of the authors has the advantages of high resolution, non intrusiveness and a wide measuring range.

关 键 词：温度测量 半导体器件 工作温度 光学干涉测量 

分 类 号：TN303[电子电信—物理电子学]