4H-SiC MESFET结构与直流特性研究  

Study of Structures and DC Characteristics on 4H-SiC MESFET

作　　者：徐俊平[1] 杨银堂[1] 贾护军[1] 张娟[1] 

机构地区：[1]西安电子科技大学微电子学院,西安710071

出　　处：《微纳电子技术》2008年第1期12-14,32,共4页Micronanoelectronic Technology

基　　金：国家预研基金资助项目(51308030201)

摘　　要：运用二维器件模拟器ISETCAD对4H-SiCMESFET不同结构的直流特性进行了模拟,重点考虑表面陷阱对直流特性的影响。与凹栅结构相比,埋栅结构的器件降低了表面陷阱对电流的影响,饱和漏电流提高了37%,而且阈值电压的绝对值增大、跨导升高,对提高4H-SiCMES-FET器件的输出功率起到一定的作用。DC characteristics in different structures of 4H-SiC MESFET were investigated by 2D device simulator, with emphasis on the influence of surface-trap. Compared with the recessed gate structure, buried-gate structure device reduced the influence of surface-trap on the current and achieved larger saturated leak current. The increment of threshold voltage absolute value and transconductance improved the output power of the 4H-SiC MESFET.

关 键 词：4H—SiC金属外延半导体场效应晶体管 凹栅 埋栅 表面陷阱 

分 类 号：TN325.3[电子电信—物理电子学] TN386