GaAs　VCSEL/MISS混合集成光子开关  

Hybrid Integrated Photonic Switch Based on the Integration of a AlGaAs VCSEL and a GaAs MISS Device

作　　者：康学军[1] 林世鸣[1] 廖奇为 高俊华 王红杰 朱家廉 张春晖 王启明[1] 

机构地区：[1]集成光电子国家重点联合实验室中国科学院半导体所,北京100083

出　　处：《高技术通讯》1997年第7期36-38,共3页Chinese High Technology Letters

基　　金：863计划资助

摘　　要：报道了MBE生长的GaAs材料VCSEL与MISS混合集成构成的光子开关。将MBE生长的超薄AIAs层氧化为AxOy层用作MISS器件的超薄半绝缘层，从而解决了该半绝缘层厚度的精密控制以及与VCSEL工艺相容的问题。该集成器件除光子开关功能外，还能实现光放大功能，并可用于自由空间光互连。The hybrid integrated photonic switch based on the integration of a GaAs/AlGaAs VCSEL and a MISS device is reported. The Ultra-Thin semi-Insulating layer (UTI) of the GaAs MISS is formed by using oxidation of AlAs which is grown by MBE. The accurate control of UTI and the processing compatibility between VCSEL and MISS is solved by this procedure. The integrated devise can be used as a photonic switch, a light amplifier, and also can be used in free space optical interconnection.

关 键 词：半导体激光器 集成 光子开关 

分 类 号：TN248.4[电子电信—物理电子学] TN29