单量子阱激光器的结构设计与分析  

The Design and Analysis of SQW-LD Structure

作　　者：张哲民[1] 黄德修[1] 李同宁[2] 

机构地区：[1]华中理工大学光电子工程系,武汉430074 [2]武汉电信器件公司,武汉430074

出　　处：《高技术通讯》1997年第7期43-45,共3页Chinese High Technology Letters

基　　金：863计划资助

摘　　要：考虑限制层内的载流子，对两种激射波长相同的匹配单量子阱激光器的载流子溢出和增益特性进行了分析。限制层在提供光学限制的同时，对载流子（主要是导带电子）分布也有影响。阱宽一定时，对光学限制因子存在最优限制层厚度；而随着限制层厚度的增加，注入到量子阱内的载流子比例减小。小阱宽的量子阱虽然光学限制因子和载流子注入比例都较小，但由于其价带耦合小于宽量子阱，从而具有高的模式增益，说明量子阱的能带结构对其光学特性有决定性的作用。采用其它减小价带耦合的方法，如在阱区引入应变，可进一步提高激光器的性能。Two kinds of lattice- matched single quantum- well lasers (with the same lasing wavelength) are analyzed. Taking account of the carrier in the separate confinement heterostructure (SCH) layer, the overflow of the carrier to SCH layer and gain property are discussed. The SCH layer can provide optical confinement, but at the same time, it also affects the distribution of the carrier(especially to the electrons in conduction band). When the well width is fixed, there exists an optimum SCH width; while with the increase of SCH width, the ratio of the carrier injected into QW decreases. Although small QW has smaller optical confinement factor and smaller ratio of carriers injected into QW, it can provide higher mode gain because of its smaller mixing between valence bands. So it may benefit the optical properties by the methods of further lowing the mixing effect (eg. introducing biaxial internal strain into the well).

关 键 词：量子阱激光器 光学限制因子 载流子 

分 类 号：TN248.4[电子电信—物理电子学] TN722.32