RTV涂膜在电解质液膜下的半导体转变现象  

Semiconducting Transformation Phenomena of RTV Coating in the Electrolyte

作　　者：钟庆东[1] 王艳珍[1] 李红蕊[1] M.Rohwerder M.Strattman 

机构地区：[1]上海大学材料科学与工程学院,上海200072 [2]马普钢铁研究所,杜塞尔多夫40237

出　　处：《高电压技术》2007年第12期85-90,共6页High Voltage Engineering

基　　金：国家自然科学基金(50571059;50615024);2007教育部新世纪优秀人才支持计划项目资助(NCET-07-0536)。~~

摘　　要：为了了解RTV涂膜在电解质液膜下的半导体转变规律,采用电位-电容法结合Mott-Schottky分析技术研究了室温硫化(RTV)涂膜在质量分数为5%的硫酸钠溶液中的导电行为。研究发现,RTV涂膜表现为极弱的p型半导体特征,电子受体密度NA约为1019m-3。随着浸泡时间的延长,RTV涂膜的导电行为从初期的p型半导体转变为绝缘体,RTV涂膜的空间电荷层电容CSC变化不大。随着测试频率的增加,RTV涂膜的CSC则逐渐减小。这一现象对RTV涂料的应用有一定指导意义。In order to realize the mechanism of semiconducting transformation of RTV coating in the electrolyte,Room temperature vulcanized（RTV） silicone rubber coating was an effective way of preventing pollution flashover for insulator used in extra high voltage grid because of its rigidity,adhesion,resistance,and having good performance of hydrophobic and hydrophobic transmission.On the basis of previous studies,a novel semiconducting behavior of RTV coating was proposed.This paper studied the semiconducting transformation phenomena of RTV coating in the electrolyte.The potential-capacitance method,combining with the Mott-Schottky analysis,was utilized to study conducting behavior of RTV coating in 5% Na2SO4 solution.Results show that RTV coating in the electrolyte is a weak p-type semiconductor,and its NA is about 1019 m-3.With increasing the immersion time,RTV coating might change from p-type semiconductor to an insulator,and its capacitance of space charge layer changes slightly.And the capacitance of space charge layer of the RTV coating decreases along with increasing of testing frequency.The phenomena may have suggestion for the application of RTV coatings in practice.It is suggested that the RTV coating show semiconducting conducting behavior in the electrolyte.

关 键 词：电位-电容法 Mott-Schottky分析 RTV涂膜 半导体转变 P型 N型 

分 类 号：TB302[一般工业技术—材料科学与工程]