一种有机薄膜器件的制备及电存储特性  

Fabrication and Memory Characteristics of a New Organic Thin Film Device

作　　者：郭鹏[1] 季欣[1] 董元伟[1] 吕银祥[1] 徐伟[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《Journal of Semiconductors》2008年第1期140-143,共4页半导体学报（英文版）

基　　金：教育部跨世纪人才基金;国家自然科学基金(批准号:60171008);上海纳米技术专项基金(批准号:0214nm005;0452nm087)资助项目~~

摘　　要：研究了一种金属/有机物/金属夹层结构有机薄膜器件的可逆电双稳特性.器件的阳极和阴极分别为真空热蒸发沉积的Ag和Al薄膜,中间介质层为真空热蒸发沉积的2-(hexahydropyrimidin-2-ylidene)-malononitrile(HPYM)有机薄膜.器件起始状态为非导通态,在大气环境下,可用正、反向电场进行信号的写入和擦除,表现为极性记忆特性.通过自然氧化的方法在底电极Al表面形成一层Al2O3薄膜层后,可使器件在不同的正向电压脉冲作用下达到不同的导电态,具有一定的多重态存储特性.同时,研究了不同的电极组合对器件电性能的影响,并通过紫外-可见吸收光谱以及喇曼光谱对器件界面进行表征.The reversible electrical bistability of a new organic thin film device with a metal/organic/metal sandwich structure is investigated. The anode and cathode metals of the device are Ag and A1, respectively, and were fabricated by vacuum evaporation. The middle medium is 2- （hexahydropyrimidin-2- ylidene）-malononitrile （HPYM） . The device, which has polar memory characteristics, can be written from a low-conductance state to a high-conductance state by a voltage pulse and can be erased by a reverse voltage. The device with a thin AlzOa layer between base metal AI and HPYM can produce different high-conductance states through the application of different positive voltages, resulting in multilevel memory capability. The effect of different electrode combinations on conductance switching devices is studied and UV-Vis absorption spectra and Raman spectra are used to obtain information on the interfaces of the devices.

关 键 词：有机薄膜器件 存储器 电双稳特性 多重态导电特性 

分 类 号：TN304[电子电信—物理电子学]