CIG前驱膜叠层方式对CIGS膜成分和结构的影响  

Influence of Lamination Modes of CuInGa Precursor Films on Composition and Microstructures of Selenized CuInGa Absorber

作　　者：李秋芳[1] 庄大明[1] 张弓[1] 宋军[1] 李春雷[1] 

机构地区：[1]清华大学机械工程系,北京100084

出　　处：《真空科学与技术学报》2008年第1期42-46,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家863基础研究基金项目(No.2004AA513023)

摘　　要：采用中频交流磁控溅射方法制备了三种不同叠层方式的CuInGa(CIG)前驱膜。采用固态法硒化,获得了CIGS吸收层。采用SEM和XRD观察和分析了薄膜的成分、组织结构和表面形貌。着重分析不同叠层方式的CIG前驱膜对CIGS吸收层薄膜成分、晶体结构的影响。结果表明,三种叠层方式的前驱膜都可以获得成分均匀、结构一致的CIGS吸收层薄膜。Ga可以有效抑制In2Se挥发相生成,保持成分的稳定性。以CuGa(top)/CuIn(bottom)形式的前驱膜有利于形成紧密晶粒排列的CIGS。CulnGa（CIG） precursor films, in three different lamination modes, were grown by middle frequency A. C. magnetron sputtering and then selenized CIG to fabricate CIGS absorber films. Both CIG and CIGS absorbers were characterized with X-ray diffraction（XRD） and scarming electron microscopy（SEM） to evaluate the influence of the laminations modes on its structures and properties. The results show that the lamination modes little affect CIGS microstructures and that Ga restrains the formation of volatile phase of In2Se and stabilizes CIGS. CIG precursors with CuGa（top）/Culn（bottom） arrangement result in compact films with uniformly distributed grains.

关 键 词：太阳能电池 CIGS 磁控溅射 前驱膜 叠层方式 

分 类 号：TM615[电气工程—电力系统及自动化]