浸泡Ni(NO_3)_2溶液的石墨在不同温度下生长的碳纳米管及其场发射性能(英文)  

Field Emission Properties of CNTs Grown on Graphite Substrates Immersed in Ni(NO_3)_2 Solution by Chemical Vapor Deposition at Different Growth Temperatures

作　　者：高阳[1] 张燕萍[1] 王莉莉[1] 张哲娟[1] 潘立坤[1] 陈弈卫[1] 孙卓[1] 杨介信 

机构地区：[1]华东师范大学纳光电集成与先进装备教育部工程研究中心,上海200062 [2]上海芯光科技有限公司,上海200062

出　　处：《液晶与显示》2007年第6期687-693,共7页Chinese Journal of Liquid Crystals and Displays

基　　金：Supported by National Nature Science Foundation of China(No.60477003);Projects fromthe Shanghai Science Technology Committee(No.0552nm006,No.0652nm033);Shanghai Pujiang Program(05PJ14320);Key Project of Photonic Technology(No.06DZ11404);Development Program of High Technology and Innovation of Shanghai Economic Committee Key Project of EXPO Plan(No.05dz05803);Project of Key Laboratory of Advanced Display and System Applications(Shanghai University) Ministry of Education,China(No.P200503)

摘　　要：将石墨衬底浸泡于0.5mol/LNi(NO3)2溶液中一段时间,之后利用低压化学气相沉积法在不同温度的条件下生长碳纳米管薄膜。研究了碳纳米管的生长温度对其场发射性能的影响。通过扫描电子显微镜和拉曼光谱对生长的碳纳米管薄膜的表征发现,随着碳纳米管的生长温度的增加,碳纳米管的直径与相应拉曼光谱中的G峰和D峰(ID/IG)的峰强比减小。同样,碳纳米管的G峰的半峰宽随着碳纳米管的生长温度的增加而减小,这表明碳纳米管的石墨化程度的增强。实验中发现,碳纳米管的场发射性能依赖于碳纳米管的生长温度。Carbon nanotubes（CNTs）were synthesized on graphite substrates immersed in 0.5 mol/L Ni（NO3）2 solution by low pressure chemical vapor deposition at different temperatures.The influence of growth temperature ranged from 500 ℃ to 700 ℃ on the field emission properties of the CNTs was studied.Scanning electron microscope and Raman spectroscopy measurements indicated that the diameters of the CNTs and intensity ratio of G and D bands（ID）/IG）decreased with the increase of the growth temperature.The full width at half maximum of G peak which also decreased with increasing of the growth temperature showed the enhancement of the graphitization of CNTs.And it is found that the field emission property of the CNTs was dependant on the growth temperature.

关 键 词：碳纳米管 场发射性能 石墨衬底 生长温度 Ni(NO3)2溶液 

分 类 号：TN383.1[电子电信—物理电子学]