直流磁控溅射制备TiN_xO_y薄膜的性能研究  

Properties of TiNxOy films prepared by DC magnetron sputtering

作　　者：陈尔东[1] 王聪[1] 杨海刚[1] 朱开贵[1] 

机构地区：[1]北京航空航天大学凝聚态物理与材料物理研究中心,北京100083

出　　处：《真空》2008年第1期60-63,共4页Vacuum

基　　金：国家自然科学基金(50772008);新世纪优秀人才支持计划资助(NCET-05-0197)

摘　　要：利用直流磁控溅射技术在玻璃衬底上制备了TiNxOy薄膜样品,研究了溅射过程中电压与N2流量之间的迟滞效应,通过X射线衍射(XRD)、UV-Vis分光光度计、四探针电阻仪等测试手段表征了样品的物相、光吸收谱、电阻等性能。结果表明:随着N2含量的提高和薄膜厚度的增加,XRD显示薄膜样品出现明显的衍射峰,吸收光谱向可见光方向展宽至500 nm,电阻随着N2含量的提高呈逐渐下降的趋势。TiNxOy thin films were prepared on glass substrates by direct current （DC） magnetron sputtering. The hysteresis effect observed in between the sputtering voltage and N2 flow rate was studied. The crystalline structures, optical and electrical properties of the sample films were characterized by X-ray diffraction （XRD）, UV-Vis spectrophotometer and four-probe voltmeter. The results showed that the diffraction peaks become clearer and the absorption spectrum edge of thin films extends for 500nm in visible light direction with increasing N2 flow rate and film thickness, while the resistivity decreases with increasing N2 flow rate.

关 键 词：TiNxOy 直流磁控溅射 迟滞回线 吸收光谱 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]