The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure  

作　　者：郭霞 沈光地 

机构地区：[1]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology

出　　处：《Chinese Physics B》2008年第1期307-310,共4页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant No 2006CB604902);the National High Technology Development Program of China (Grant No 2006AA03A121);the National Natural Science Foundation of China (Grant No 60506012);Beijing Natural Science Foundation (Grant No KZ200510005003);Fok Ying Tung Education Foundation (Grant No 101062);Excellent PhD Thesis Foundation (Grant No 200542),;Beijing New-Star Program of China (Grant No 2005A11)

摘　　要：The scalability of the tunnel-regenerated multi-active-region （TRMAR） structure has been investigated for the application in light-emitting diodes （LEDs）. The use of the TRMAR structure was proved theoretically to have unique advantages over conventional slngle-active-layer structures in virtually every aspect, such as high quantum efficiency, high power and low leakage. Our study showed that the TRMAR LED structure could obtain high output power under low current injection and high wall-plug efficiency compared with the conventional single-active-layer LED structure.The scalability of the tunnel-regenerated multi-active-region （TRMAR） structure has been investigated for the application in light-emitting diodes （LEDs）. The use of the TRMAR structure was proved theoretically to have unique advantages over conventional slngle-active-layer structures in virtually every aspect, such as high quantum efficiency, high power and low leakage. Our study showed that the TRMAR LED structure could obtain high output power under low current injection and high wall-plug efficiency compared with the conventional single-active-layer LED structure.

关 键 词：SCALABILITY tunnel junction REGENERATION 

分 类 号：TN312.8[电子电信—物理电子学]