δ掺杂AlGaAs/GaAsHEMT的二维量子模型  

Two-Dimensional Quantum Model for δ-Doped AlGaAs/GaAs HEMT

作　　者：张兴宏[1] 杨玉芬[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1997年第9期682-687,共6页半导体学报（英文版）

摘　　要：本文我们首次建立了δ掺杂AlGaAs／GaAs高电子迁移串晶体管（HEMT）的二维量子模型，这种模型考虑了HEMT器件沟道中二维电子气的量子特性，根据这个模型，我们应用二维数值模拟方法和自治求解薛定谔方程和泊松方程获得了器件沟道中的二维电子浓度，同时也得到了器件沟道中的横向电场分布和横向电流密度．模拟结果表明二维电子气主要分布在异质结GaAs一侧量子附中．详细讨论了不同栅压和不同漏压下HEMT沟道中的二维电子浓度的分布及变化．A two-dimensional quantum model is first presented for 3-doped AlGaAs/GaAs HEMT. The quantum characteristics of two-dimensional electron gas (2DEG) in the channel of HEMT are considered. According to the model, two-dimensional electron concentrations in channel of the HEMT are obtained by solving Schrodinger's and Poisson's equations self-consistently and using the two-dimensional numerical simulation. Transverse electric field and current density in channel of the device are also obtained. The simulation results show that 2DEG is mainly distributed in the quantum well of the heterojunction near GaAs layer, and the pinch-off characteristics of HEMT are indicated from two-dimensional electron's concentration under the different gate voltage.

关 键 词：掺杂 砷化镓 镓铝砷化合物 二维量子模型 

分 类 号：TN304.26[电子电信—物理电子学] TN305.3