高亮度AlGaInP红光发光二极管  

High bright AlGaInP red light LED

作　　者：韩军[1] 李建军[1] 邓军[1] 邢艳辉[1] 于晓东[1] 林委之[1] 刘莹[1] 沈光地[1] 

机构地区：[1]北京工业大学,北京市光电子技术实验室,北京100022

出　　处：《光电子．激光》2008年第2期171-173,共3页Journal of Optoelectronics·Laser

基　　金：北京市科委资助项目(D0404003040221)

摘　　要：对用于提高AlGaInP红光发光二极管(LED)出光效率的分布布拉格反射镜(DBR)和增透膜进行了分析,用金属有机物化学气相沉积(MOCVD)生长了包含DBR和增透膜的LED,在20mA注入电流下,LED的峰值波长为623nm,光强达到200mcd,输出光功率为2.14mW。与常规的LED相比,光强和输出光功率有很大的提高。The distributed Bragg reflector（DBR） and the enhanced transmission film are analyzed,which are used to increase the light extraction efficiency in AlGaInP red light light emitting diodes（LED）. The LED with DBR and enhanced transmission film was grown by MOCVD. At 20 mA Dc injection current,the LED peak wave length was 623 nm,the light intensity was 200 mcd,and the output light power was 2.14 mW. The light intensity and Output light power were improved better than that of traditional LED.

关 键 词：红光发光二极管(LED) 分布布拉格反射镜(DBR) 增透膜 金属有机物化学气相沉积(MOCVD) 

分 类 号：TN383[电子电信—物理电子学]