2．5Gb／s GaAsPIN／PHEMT单片集成光接收机前端  

2.5 Gb/s GaAs PIN/PHEMT monolithic integrated optical receiver front end

作　　者：焦世龙[1] 叶玉堂[1] 陈堂胜 杨先明[1] 李拂晓[3] 邵凯[3] 吴云峰[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054 [2]单片集成电路与模块国家级重点实验室,江苏南京210016 [3]南京电子器件研究所,江苏南京210016

出　　处：《光电子．激光》2008年第2期191-195,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60277008);单片集成电路与模块国家重点实验室基金资助项目(51491050105DZ0201)

摘　　要：采用0.5μm GaAs PHEMT工艺,研制了一种PIN光探测器和分布放大器单片集成850nm光接收机前端。探测器光敏面直径为30μm,电容为0.25pF,10V反向偏压下的暗电流小于20nA。分布放大器-3dB带宽接近20GHz,跨阻增益约46dBΩ;在50MHz^16GHz范围内,输入、输出电压驻波比均小于2;噪声系数在3.03~6.50dB之间。单片集成光接收机前端在1.0和2.5Gb/s非归零(NRZ)伪随机二进制序列(PRBS)调制的光信号下得到较为清晰的输出眼图。The front end of an 850 nm monolithic integrated optical receiver has been developed with 0.5 μm GaAs PHEMT process,which comprises a PIN photodetector and a distributed amplifier. The photodetector has a diameter and capacitance of 30 μm and 0.25 pF, respectively,as well as a dark current of less than 20 nA under the reverse bias of 10 V. The distributed amplifier has a -3dB bandwidth close to 20 GHz,with a transimpedance gain of 46 dB Ω,; In the range of 50 MHz- 16 GHz,both the input and output voltage standing wave ratios are less than 2; The noise figure varies from 3.03 to 6.5 dB within the bandwidth. The monolithic integrated optical receiver front end output eye diagrams for 1 Gb/s and 2. 5 Gb/s NRZ pseudorandom binary sequence （PRBS） are clear and satisfying.

关 键 词：PIN光探测器 分布放大器 光接收机 眼图 

分 类 号：TN929.11[电子电信—通信与信息系统]