Growth Model for Pulsed-Laser Deposited Perovskite Oxide Films  

作　　者：王旭 费义艳 朱湘东 吕惠宾 杨国祯 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 [2]Department of Physics, University of California at Davis, Davis, California 95616, USA

出　　处：《Chinese Physics Letters》2008年第2期663-666,共4页中国物理快报（英文版）

摘　　要：We present a multi-level growth model that yields some of the key features of perovskite oxide film growth as observed in the reflection high energy electron diffraction （RHEED） and ellipsometry studies. The model describes the effect of deposition, temperature, intra-layer transport, interlayer transport and Ostwald ripening on the morphology of a growth surface in terms of the distribution of terraces and step edges during and after deposition. The numerical results of the model coincide well with the experimental observation.We present a multi-level growth model that yields some of the key features of perovskite oxide film growth as observed in the reflection high energy electron diffraction （RHEED） and ellipsometry studies. The model describes the effect of deposition, temperature, intra-layer transport, interlayer transport and Ostwald ripening on the morphology of a growth surface in terms of the distribution of terraces and step edges during and after deposition. The numerical results of the model coincide well with the experimental observation.

关 键 词：VAPOR-PHASE EPITAXY BY-LAYER GROWTH INTENSITY OSCILLATIONS DIFFRACTION SURFACES GAAS REFLECTION DYNAMICS MBE 

分 类 号：O484.1[理学—固体物理]