窄禁带碲镉汞调制光谱的近期进展和前景(英文)  

RECENT PROGRESS AND POTENTIAL IMPACT OF MODULATION SPECTROSCOPY FOR NARROW-GAP HgCdTe

作　　者：邵军[1] 马丽丽[1] 吕翔[1] 吴俊[2] 李志峰[1] 郭少令[1] 何力[2] 陆卫[1] 褚君浩[1] 

机构地区：[1]中科院上海技术物理研究所红外物理国家实验室,上海200083 [2]中科院上海技术物理所材器中心,上海200083

出　　处：《红外与毫米波学报》2008年第1期1-6,20,共7页Journal of Infrared and Millimeter Waves

基　　金：Supported by the national Natural Science Foundation of China(60676063);the Science and Technology Commssion of Shanghai Mu-nicipality(05ZR14133,06JC14072);the Knowledge Innovation Program of Chinese Academy of Sciences.

摘　　要：简要介绍了红外光调制反射谱和调制光致发光谱的最新进展,并重点比较了相对于传统实验方法在信噪比,谱分辨率和实验耗时等方面所取得的显著进展.给出了在MBE生长HgCdTe薄膜样品研究中的应用实例,显示了该技术在光谱研究窄禁带半导体带间和低维结构带内跃迁方面的应用前景.Recent progress of infrared photoreflectance and modulated photoluminescence techniques was outlined with special attention focused on the significant improvement of signal-to-noise ratio, spectral resolution and time consumption relative to the conventional techniques. Application of these techniques to molecular beam epitaxially grown HgCdTe films was given as examples, from which the potential impact of the techniques was foreseen on the optical study of narrow-gap semiconductors and inter-subband transition of wide-gap semiconductors with low-dimensional structures.

关 键 词：步进扫描傅立叶变换红外光谱仪 红外光调制反射 调制光致发光 信噪比 谱分辨率 

分 类 号：TN304.26[电子电信—物理电子学] U467.48[机械工程—车辆工程]