半导体硅上激光诱导选择性电镀铜  

Laser Induced Selective Electroplating of Copper on Semiconductor Silicon

作　　者：张国庆[1,2] 姚素薇[1,2] 刘冰 郭鹤桐[1,2] 龚正烈 

机构地区：[1]天津大学应用化学系 [2]天津理工学院

出　　处：《应用化学》1997年第1期33-36,共4页Chinese Journal of Applied Chemistry

基　　金：国家自然科学基金

摘　　要：在ｐ型硅上利用氩离子激光进行了选择性电镀铜的研究，考察了半导体表面处理条件、阴极偏压和激光强度对阴极光电流及空间选择性的影响．表面氧化膜和阳极钝化膜的存在使光电流降低近一个数量级，少量氧化膜可使选择性提高．外加阴极偏压和激光强度的增加导致光电流增大，选择性降低．将氢氟酸处理的硅片在电解液中放置１０～２０ｍｉｎ，于稳定电位附近。Ar + laser induced selective electroplating of copper on p type silicon was studied in the present paper. Influences of surface oxide film, cathodic voltage as well as the laser power on the cathodic photocurrent and selectivity of plating were investigated. The results show that both native film and anodic passive film existed on silicon can reduce the photocurrent by one order of magnitude; however, a small amount of oxide film can improve the selectivity of deposition. When cathodic bias voltage and laser power are increased, the photocurrent is enhanced and the selectivity reduced. By utilizing weaker laser beam, selective copper deposit can be obtained on p silicon which has been etched in 1∶1 HF acid and then laid in the bath for 10￣20 min preliminarily.

关 键 词：激光诱导电镀 选择性 镀铜 半导体 硅 

分 类 号：TQ153.14[化学工程—电化学工业]