用ZnS薄膜作为空穴缓冲层的高效率有机发光二极管(英文)  

Efficient Organic Light-Emitting Diodes with ZnS Thin Films as Hole Buffer Layer

作　　者：张靖磊[1] 仲飞[1] 刘彭义[1] 

机构地区：[1]暨南大学物理学系,广州510632

出　　处：《电子器件》2008年第1期40-43,共4页Chinese Journal of Electron Devices

基　　金：广东省自然科学基金项目资助(06025173)

摘　　要：用磁控溅射方法制备的ZnS薄膜作为有机发光器件(OLEDs)的空穴缓冲层,使典型结构的OLEDs(ITO/TPD/Alq/LiF/Al)的发光性能得到改善。ZnS缓冲层厚度对器件性能影响的实验结果表明,当ZnS缓冲层厚度为5 nm时,器件的亮度增加了2倍多;当ZnS缓冲层厚度为5、10nm时,器件的发光电流效率增加40%。研究结果表明ZnS薄膜是一种好的缓冲层材料,它能够提高器件的发光效率,改善器件的稳定性。An organic light-emitting diodes （OLEDs） using ZnS thin film by RF magnetron sputtering as a hole buffer layer were prepared. With the presence of the buffer layer, the devices using the typical structure of ITO/TPD/Alq/LiF/Al performed a good electroluminescent properties compared with the devices without ZnS buffer layer. The investigation on the effects of the ZnS thickness showed that the device with 5 nm ZnS buffer layer double its luminance under driven voltage 20 V, and the current efficiency of the devices with 5 and 10 nm ZnS is improved by about a factor of forty percent compared with the devices without buffer layer. The results suggested that ZnS may be a good anode buffer layer material and can improve the efficiency and stability of OLEDs.

关 键 词：有机发光二极管 ZNS薄膜 空穴缓冲层 电流效率 

分 类 号：TN383.1[电子电信—物理电子学]