硅粉在带振动阴极反应室中的刻蚀  

Etching of Si Particulates in the Chamber with Viberation Cathode

作　　者：王敬义[1] 尹盛[1] 赵亮[1] 赵伯芳[1] 王飞[1] 王家鑫[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《中国材料科技与设备》2007年第6期37-40,共4页Chinese Materials Science Technology & Equipment

基　　金：国家自然科学基金资助项目（10475029）

摘　　要：文中提供了带倾斜角振动171极的等离子体反应室及他用于刻蚀硅粉的实验结果。振动171极上硅粉的运动分析表明其在反应区滞留的时间可达数分钟之久，这就使低纯硅粉的纯化处理可一次完成。刻蚀速率模型几个关键公式的计算结果表明中性高能粒子的刻蚀效果不可忽视。理论分析与实验数据大致吻合，这证明新的反应室用于粉粒表面刻蚀和纯化都大大优于立式反应室。The plasma chamber with the inclined vibration cathode and its test result for the etching of Si particulates were provided in the paper. The motion analysis of Si powder on the Cathode surface showes that the stop time in the reaction area can increase by several minutes, which the etching purity of the low purity Si powder can be accomplished only one time. The calculation results of key equations for the etching rate model show the etching effect of the energetic neutrals can not be omitted. The theory analysis are agree with the test data, this have proved the new plasma device to be more better than the vertical chambers.

关 键 词：等离子体纯化 粉体表面刻蚀 振动阴极 

分 类 号：TN304.051[电子电信—物理电子学]