集成化离子敏场效应传感器的研究进展  

Advancement of Integrated Ion Sensitive Field Effect Transistor Based Sensor

作　　者：王春华[1] 赵岩[1] 杨昌勇[1] 黄岩[1] 

机构地区：[1]湖南大学计算机与通信学院,长沙410082

出　　处：《微纳电子技术》2008年第2期63-68,共6页Micronanoelectronic Technology

摘　　要：在介绍离子敏场效应晶体管(ISFET)传感器的应用和基本工作原理的基础上,阐述了集成化ISFET传感器的研究现状,包括ISFET敏感膜及其制造工艺与CMOS兼容性研究、集成化读出电路、多传感器集成等方面。展望了ISFET传感器的研究趋势,认为在以下方面值得探索和研究:敏感膜是把化学变量转换为电学变量的关键;高性能读出电路的研究;集ISFET、读出电路及后端信号处理电路于一体的低功耗ISFET传感器的系统集成;多功能、智能化的多传感器集成;研究集微传感器、微执行器、信号处理和控制电路、接口电路、通信系统以及电源等于一体的微机电系统(MEMS);ISFET微传感系统的数字化集成等。On the basis of introducing the application and working principle of the sensor based on ISFET （ion sensitive field effect transistor）, the development status of ISFET-sensor is reviewed, which included the sensitive layer, manufacture methods, compatibility with CMOS, integrated read out circuits, multi-sensor integration, etc. The research trend of ISFET-sensor is prospected. Exporation and research of the following fields deserve to be concerned： the sensitive layer is the key of converting chemical variable to electrical variable; the research of high performance read-out circuit; the low power ISFET-sensor integrated with the ISFET, read-out circuit, and signal processing circuit; the multi-functions and intellectualized sensors＇ integrated; the research of MEMS （micro-electro-mechanical sys- tems） integrated of the micro-sensor, micro-actuator, signal processing and control circuit, interface circuit, communication system and power supply so on; the digital integration ISFET-micro-sensing system.

关 键 词：离子敏场效应晶体管 传感器 敏感膜 集成化 读出电路 

分 类 号：TN386[电子电信—物理电子学] TP212.2[自动化与计算机技术—检测技术与自动化装置]