一种高速片内电流监控器实现  

A High-Speed Built-in Current Sensor Implementation

作　　者：郭慧[1] 冯建华[2] 

机构地区：[1]北京大学深圳研究生院,广东深圳518055 [2]北京大学微电子系,北京100871

出　　处：《微电子学与计算机》2008年第2期140-143,共4页Microelectronics & Computer

摘　　要：静态电流(IDDQ)测试的实现方法研究是IDDQ测试领域的重要内容之一,高速、高精度是共同追求的目标。通过分析测试向量改变时流过被测电路的电源电流变化情况,得出制约IDDQ测试速度的主要因素。基于此,采用CMOS0.5μm工艺参数、SPICE仿真工具和模拟集成电路设计规则,提出一种快速、高精度的BICS(片内电流监控器)的设计方案。设计中利用辅助的PMOS开关管和延迟电路,有效地解决测试速度问题。设计出的电路达到了100MHz的测试速率、1A测量精度、500mV的最大电源电压降、50μA以上的故障电流检测能力,可以满足一定的实际应用需要。IDDQ sensor＇s implementation is one of the major research areas in research on IDDQ testing. Achieving high speed and high sensitivities are two key goals. Through analyzing the change of IDD in device under test, it is known that large dynamic current is the key factor which influences IDDQ test speed very much. A novel BICS with high sensitivity that operates very fast is proposed. BICS has advantages like high speed , high resolution ,and it is the mainstream in the future The circuit is designed by using a 0.5μm process. Simulation results show speeds up to 100MHz and it can detect a 50μA abnormal IDDQ at 5-V VDD. A resolution better than 1μA is also achieved. Attached its simulation results and analysis of them. Some items that should be taken into account are presented.

关 键 词：电流监控器 IDDQ IDDQ测试 BICS 测试速度 

分 类 号：TN4[电子电信—微电子学与固体电子学]