平板显示器中ITO透明电极制备的研究  

Preparation of ITO Transparent Electrode for FPD

作　　者：姚亮[1] 张永爱[1] 雷晓阳[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院光电显示技术研究所,福建福州350002

出　　处：《液晶与显示》2008年第1期16-20,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：福建省科技重大专项(No.2004HZ01-2)

摘　　要：利用光刻技术和湿法刻蚀技术制备ITO透明电极,借助视频显微仪和台阶仪观测电极形状和表面形貌。比较了不同溶液的刻蚀效果,指出采用盐酸加三氯化铁溶液刻蚀效果最佳,分别讨论了HCl含量和FeCl3含量变化对ITO膜刻蚀速率的影响。最后指出在25±2℃的环境下,刻蚀液HCl、H2O和FeCl3.6H2O的配比满足3L∶1L∶(20～30g)时,ITO膜的刻蚀速率能达到1nm/s,所制备的透明电极边缘整齐无钻蚀,适合于制备平板显示器中的透明精细电极。ITO transparent electrode was prepared by photolithography technology and wet chemical etching, thicknesses of ITO thin film were measured by dint of profilometer and shapes of ITO transparent electrode were observed by video microscope. Comparison was made between the etch effect of different etchants, with that of the HCl and FeCl3 solution the best. Discussion was also carried out about the influence of the change of HCl and FeCl3 content on the etch rate of ITO thin films. It was found that etch rate of ITO thin films can reach to 1 nm/s when the ratio of HCl, H2O and FeCl3·6H2O was 3 L： 1 L： 20-30 g at 25 ℃ ±2 ℃, and the ITO transparent electrode was regular and remained the same as the graph on the mask. So this way of preparing ITO transparent electrodes was very suitable for FPD.

关 键 词：平板显示器 ITO透明电极 湿法刻蚀 

分 类 号：O484.1[理学—固体物理]