晶体硅太阳电池内阻对其输出特性的影响分析  

Influence of internal resistances on output characteristics of crystalline silicon solar cells

作　　者：唐文芳[1] 丁宣浩[1] 李兵[1] 

机构地区：[1]桂林电子科技大学数学与计算科学学院,广西桂林541004

出　　处：《华东电力》2008年第1期112-114,共3页East China Electric Power

基　　金：国家自然科学基金资助项目(10361003);广西省自然科学基金资助项目(0542046)

摘　　要：从太阳能电池输出特性方程出发,经由理论作图(U-I曲线)分析晶体硅太阳电池内阻对其输出特性的影响,通过数值计算,说明当晶体硅太阳电池的并联内阻大于100Ω时可以忽略。在此基础上,得到电池串联内阻与输出电流、电压之间的函数表达式,只要实测出某一确定光照强度及温度下负载的任意一组电流、电压值,计算相应的串联内阻值,进一步计算最大功率点处的电流、电压及负载值,可为最终的最大输出功率跟踪提供一种简便方法。Based on the precise output characteristic equation for the crystalline silicon solar cell, the influence of its internal resistance on its output characteristic is analyzed by using the U-I curve, and numerical computations show that the shunt resistance of the crystalline silicon solar cell can be neglected when it exceeds 100 Ω. The functional expression for the relationship between the cell＇s series resistance and the current or the voltage can be obtained consequently. It concludes that as long as one set of current and voltage values of the load under a certain light intensity and temperature is known, the relevant series resistance can be calculated easily. The current, voltage, and load values at the maximum power point can further be calculated.

关 键 词：太阳能电池 并联内阻 串联内阻 最大输出功率点跟踪 

分 类 号：TK6[动力工程及工程热物理—生物能]