IGBT特性的辐照效应  

The Effects of Radiation on the Characteristics of the IGBT

作　　者：袁寿财[1] 刘树林[2] 

机构地区：[1]西安电力电子技术研究所,西安710061 [2]西安建筑科技大学自控系,西安710055

出　　处：《微电子学与计算机》1997年第4期14-16,共3页Microelectronics & Computer

摘　　要：本文简述了中子辐照对IGBT特性的影响，给出了器件在中子辐射注量高达10（13）n／cm2时的实验结果。实现发现，随着中子注量的增加，开关时间缩短，阀值电压漂移。对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。In this paper the effects of neutron radiation on the characteristics of IGBT are simply described, experimental results are presented for devices that have been irradiated up to a fluence of 1013 n/cm2. It is found that the switching time decreases and the threshold voltage shift with increasing neutron fluence. For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.

关 键 词：IGBT 辐照 阈值 双极晶体管 

分 类 号：TN322.8[电子电信—物理电子学]