ZnO纳米线二极管发光器件制备及特性研究  

Fabrication of ZnO nanowire-based diodes and their light-emitting properties

作　　者：王艳新[1] 张琦锋[1] 孙晖[1] 常艳玲[1] 吴锦雷[1] 

机构地区：[1]纳米器件物理与化学教育部重点实验室,北京大学信息科学技术学院,北京100871

出　　处：《物理学报》2008年第2期1141-1144,共4页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(973)项目(批准号:2001CB610503);国家自然科学基金(批准号:60471007,50672002);北京市自然科学基金(批准号:4042017)资助的课题.~~

摘　　要：运用液相法生长成ZnO纳米线薄膜,并利用肖特基型异质结的发光原理,构造成功肖特基型ZnO纳米线二极管发光器件.在大于6V直流电压驱动下,观察到近紫外波段392nm处和可见光波段525nm的发射谱带.从单向导电特性及ZnO纳米线材料的能带结构等方面探讨了该种器件的电致发光机理.A Schottky type light-emitting diode of ZnO nanowire was fabricated based on the principle of luminescence of Schottky barrier heterojunction. Driven by a voltage of above 6 V, an EL spectrum was obtained. The spectrum consisted of two peaks： one is centered at a wavelength of the ultraviolet 392 nm, and the other at the visible 525 nm. The mechanism of electroluminescence of this device was analyzed according to the rectifying I- V curve and the energy band structure.

关 键 词：ZNO纳米线 肖特基二极管 电致发光 

分 类 号：TN312.8[电子电信—物理电子学]