A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium  

钒掺杂形成半绝缘6H-SiC的补偿机理(英文)

作　　者：王超[1] 张义门[1] 张玉明[1] 王悦湖[1] 徐大庆[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《Journal of Semiconductors》2008年第2期206-209,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60376001);教育部重点项目(批准号:106150);西安应用材料基金(批准号:XA-AM-200607)资助项目~~

摘　　要：A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the intentional doping of vanadium. Because we found nitrogen to be the principal shallow donor impurity in SiC by secondary ion mass spectroscopy （SIMS） measurements, semi-insulating properties in SiC are achieved by compensating the nitrogen donor with the vanadium deep acceptor level. The presence of different vanadium charge states V^3＋ and V^4＋ is detected by electron paramagnetic resonance and optical absorption measurements,which coincides with the results obtained by SIMS measurements. Both optical absorption and low temperature photoluminescence measurements reveal that the vanadium acceptor level is located at 0.62eV below the conduction band in 6H-SiC.研究了钒掺杂生长半绝缘6 H-SiC的补偿机理.二次离子质谱分析结果表明,非故意掺杂生长的6 H-SiC中,氮是主要的剩余浅施主杂质.通过较深的钒受主能级对氮施主的补偿作用,得到了具有半绝缘特性的SiC材料.借助电子顺磁共振和吸收光谱分析,发现SiC中同时存在中性钒( V4 +)和受主态钒( V3 +)的电荷态,表明掺入的部分杂质钒通过补偿浅施主杂质氮,形成受主态钒,这与二次离子质谱分析结果相吻合.通过对样品进行吸收光谱和低温光致发光测量,发现钒受主能级在6 H-SiC中位于导带下0.62eV处.

关 键 词：6H-SIC SEMI-INSULATING vanadium doping COMPENSATION vanadium acceotor level 

分 类 号：TN304[电子电信—物理电子学]