云南高校图书馆联盟文献共享服务平台- SEMI-INSULATING

SEMI-INSULATING: 作品数：33被引量：18H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：赵有文林兰英王超张玉明张义门更多>>; 相关机构：中国科学院河北半导体研究所香港大学西安电子科技大学更多>>; 相关期刊：《Chinese Physics Letters》《Journal of Energy and Power Engineering》《Science Bulletin》《Science China(Information Sciences)》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划天津市自然科学基金中国博士后科学基金更多>>

1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate被引量：1: 《Science China(Information Sciences)》2023年第2期246-251,共6页Shenglei ZHAO Jincheng ZHANG Yachao ZHANG Lansheng FENG Shuang LIU Xiufeng SONG Yixin YAO Jun LUO Zhihong LIU Shengrui XU Yue HAO; supported in part by National Science Fund for Distinguished Young Scholars(Grant No.61925404);National Natural Science Foundation of China(Grant No.62074122);Fundamental Research Plan(Grant No.JCKY2020110B010);Major Projects of Shanxi Province(Grant No.20201102012)。; A study of 1.7 kV normally-off p-GaN gate high-electron-mobility transistors(HEMTs)on SiC substrates is presented.The fabricated p-GaN HEMT with a gate-drain spacing LGD=5μm exhibited a threshold voltage of 1.10 V,a ...; 关键词：p-GaN gate HEMTS high voltage SiC substrate

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template: 《Chinese Physics B》2021年第11期532-537,共6页Qun-Si Yang Qing Liu Dong Zhou Wei-Zong Xu Yi-Wang Wang Fang-Fang Ren Hai Lu; Project supported by the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20190302 and BK20201253).; Alpha particle radiation detectors with planar double Schottky contacts(DSC)are directly fabricated on 5-μm-thick epitaxial semi-insulating(SI)GaN:Fe film with resistivity higher than 1×10^(8)Ω·cm.Under 10 V bias,...; 关键词：GAN alpha particle DETECTOR double Schottky contacts

Dynamic Behavior and Its Consideration of EHD Liquid Extraction Phenomenon Causing under DC or Low-Frequency AC Voltage: 《Journal of Energy and Power Engineering》2019年第6期229-239,共11页Ryoichi Hanaoka Yoji Fujita Takuma Kajiura Hidenobu Anzai; This paper describes an experimental and theoretical study on an extraction phenomenon of liquids occurring at an air gap between the liquid surface and the electrode by applying a direct current (DC) or low-frequency...; 关键词：ELECTROHYDRODYNAMICS (EHD) extraction phenomenon SEMI-INSULATING and insulating liquids DC or LOW-FREQUENCY AC voltage dynamic behavior of liquids moisture removal effect in oil

Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates被引量：5: 《Chinese Physics B》2019年第6期414-418,共5页Xue Ji Wen-Xiu Dong Yu-Min Zhang Jian-Feng Wang Ke Xu; Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0403002);the National Science Fund for Distinguished Young Scholars,China(Grant No.Y3CHC11001);the National Natural Science Foundation of China(Grant No.11604368); One-port surface acoustic wave resonators(SAWRs) are fabricated on semi-insulating high-quality bulk GaN and GaN film substrates, respectively. The semi-insulating GaN substrates are grown by hydride vapor phase epita...; 关键词：surface acoustic wave one-port resonator GALLIUM nitride(GaN) SEMI-INSULATING FE-DOPED

Effect of de-trapping on carrier transport process in semi-insulating CdZnTe被引量：1: 《Chinese Physics B》2015年第6期511-515,共5页郭榕榕介万奇查钢强徐亚东冯涛王涛杜卓同; Project supported by the National Instrumentation Program,China(Grant No.2011YQ040082);the National Natural Science Foundation of China(Grant Nos.61274081,51372205,and 51202197);the National 973 Project of China(Grant No.2011CB610400),the China Postdoctoral Science Foundation(Grant No.2014M550509);the 111 Project of China(Grant No.B08040); The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons ...; 关键词：CDZNTE LBIC de-trapping electron transport process mobility

High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD: 《Chinese Physics Letters》2015年第3期121-123,共3页孔祥挺周旭亮李士颜乔丽君刘洪刚王圩潘教青; We demonstrate high-performance In0.23 Ga0.77 As channel metal-oxide-semiconductor field-effect transistors （ MOS- FETs） with high on-current to off-current （Ion/Ioff） ratio grown on semi-insulating GaAs wafers by...; 关键词：As Channel MOSFETs with High Current Ratio I MOSFET Ga Grown on Semi-insulating GaAs Substrates by MOCVD off

Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers: 《Acta Metallurgica Sinica(English Letters)》2014年第6期1083-1087,共5页Xianglong Yang Kun Yang Yingxin Cui Yan Peng Xiufang Chen Xuejian Xie Xiaobo Hu; financially supported by National Basic Research Program of China (No. 2011CB301904);the Natural Science Foundation of China (Nos. 11134006 and 61327808); The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-i...; 关键词：SiC Anomalous resistivity Polytype inclusion Activation energy Compensation mechanism

4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination: 《Chinese Physics B》2014年第5期461-464,共4页袁昊汤晓燕张义门张玉明宋庆文杨霏吴昊; Project supported by the National Natural Science Foundation of China(Grant Nos.61234006 and 61274079);the Key Specific Projects of Ministry of Education of China(Grant No.625010101);the Science Project of State Grid,China(Grant No.SGRI-WD-71-13-004); Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes （SBDs） with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon （SIPOS） FP termination has been fabricated. The ...; 关键词：4H-SIC Schottky-barrier diodes semi-insulating polycrystalline silicon field plates termination

Effect of the Si-doped In_(0.49)Ga_(0.51)P barrier layer on the device performance of In_(0.4)Ga_(0.6)As MOSFETs grown on semi-insulating GaAs substrates被引量：1: 《Chinese Physics B》2013年第7期463-466,共4页常虎东孙兵薛百清刘桂明赵威王盛凯刘洪刚; the National Basic Research Program of China(Grant Nos.2011CBA00605 and 2010CB327501);the National Natural Science Foundation of China(Grant No.61106095);the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011ZX02708-003); In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the firs...; 关键词：metal–oxide–semiconductor field-effect transistor INGAAS INGAP Al2O3

Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN: 《Chinese Physics Letters》2011年第3期184-187,共4页HOU Qi-Feng WANG Xiao-Liang XIAO Hong-Ling WANG Cui-Mei YANG Cui-Bai YIN Hai-Bo LI Jin-Min WANG Zhan-Guo; Supported by the Knowledge Innovation Project of Chinese Academy of Sciences(Nos YYYJ-0701-02,ISCAS2008T01,ISCAS2009L01 and ISCAS2009L02);the National Natural Sciences Foundation of China(Nos 60890193 and 60906006);and the National Basic Research Program of China(Nos 2006CB604905 and 2010CB327503).; Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence.Intense yellow and blue luminescence bands are observed in semi-insulating GaN,while in n-GaN the yell...; 关键词：GAN LUMINESCENCE YELLOW

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