Effect of de-trapping on carrier transport process in semi-insulating CdZnTe  

作　　者：郭榕榕 介万奇 查钢强 徐亚东 冯涛 王涛 杜卓同 

机构地区：[1]State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University

出　　处：《Chinese Physics B》2015年第6期511-515,共5页中国物理B（英文版）

基　　金：Project supported by the National Instrumentation Program,China(Grant No.2011YQ040082);the National Natural Science Foundation of China(Grant Nos.61274081,51372205,and 51202197);the National 973 Project of China(Grant No.2011CB610400),the China Postdoctoral Science Foundation(Grant No.2014M550509);the 111 Project of China(Grant No.B08040)

摘　　要：The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V-s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V-s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.

关 键 词：CDZNTE LBIC de-trapping electron transport process mobility 

分 类 号：O441[理学—电磁学]