Project supported by the National Natural Science Foundation of China(Grant No.61874089);the Fund of MIIT(Grant No.MJ-2017-F-05);the 111 Project of China(Grant No.B08040);the NPU Foundation for Fundamental Research,China;the Research Found of the State Key Laboratory of Solidification Processing(NWPU),China
The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped c...
Project supported by the National Instrumentation Program,China(Grant No.2011YQ040082);the National Natural Science Foundation of China(Grant Nos.61274081,51372205,and 51202197);the National 973 Project of China(Grant No.2011CB610400),the China Postdoctoral Science Foundation(Grant No.2014M550509);the 111 Project of China(Grant No.B08040)
The effect of de-trapping on the carrier transport process in the CdZ'nTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons ...
supported by the Key Program ofthe National Natural Science Foundation of China(No.5063206);the Knowledge Innovation Program of the Chinese Academy of Sciences(Nos.C2-32,C2-50).
To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard...