AFM/SCM及LBIC技术在平面型保护环结构InGaAs探测器设计中的应用(英文)  

OPTIMUM GUARD-RING FOR PLANAR InP/InGaAs PHOTODIODE:CHARACTERIZED WITH AFM,SCM and LBIC

作　　者：李永富[1,2,3] 唐恒敬[1,2] 朱耀明[1,2,3] 李淘[1,2,3] 殷豪[4] 李天信[4] 李雪[1,2] 龚海梅[1,2] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083 [3]中国科学院研究生院,北京100039 [4]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2010年第6期401-405,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by Key Program of National Science Foundation of China(50632060)

摘　　要：为研究保护环结构对平面型正照射式InP/InGaAs探测器光敏元扩大现象的抑制作用,设计并研制了带有不同保护环-光敏元间距的InGaAs探测器.通过原子力显微镜（AFM）及扫描电容显微镜（SCM）获得了保护环与光敏元之间的实际距离.利用激光束诱导电流（LBIC）技术研究了带有保护环结构的InGaAs探测器的光响应特性.研究表明,无保护环结构的探测器的LBIC信号可以用指数衰减函数描述,而带有保护环结构的探测器的LBIC信号则遵从高斯分布.引入保护环结构后,器件光敏元的扩大量会随着保护环-光敏元间距的减小而线性减小.在器件设计中,比较合适的保护环-光敏元间距应介于7~12μm之间.To study the guard-ring suppression effect on the extension of the photo-sensitive area in planar-type front illuminated InP/InGaAs hetero-structure detector,the InGaAs photo detectors with different distances between guard-ring and PN junction were designed and fabricated.The actual distance between guard-ring and PN junction of the detector was calculated based on the atomic force microscopy（AFM） and scanning capacitance microscopy（SCM） measurements.The characteristics of the photo response of the detectors with guard-ring were carried out with laser beam induced current（LBIC） method.It was indicated that LBIC signal of the photo detector without guard-ring fit well with the exponential decay function,while that of detector with guard-ring followed the Gaussian distribution.The extension value of the photo-sensitive area decreased linearly as the distance between the guard-ring and PN junction decreased.It was concluded that the appropriate gap between the guard-ring and PN junction should be in the range of 7 to 12μm.

关 键 词：扫描电容显微镜(SCM) 激光束诱导电流(LBIC) 光生载流子扩散 保护环 INP/INGAAS 

分 类 号：TN2[电子电信—物理电子学]