1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate  

作　　者：Shenglei ZHAO Jincheng ZHANG Yachao ZHANG Lansheng FENG Shuang LIU Xiufeng SONG Yixin YAO Jun LUO Zhihong LIU Shengrui XU Yue HAO 

机构地区：[1]Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China [2]School of Mechano-Electronic Engineering,Xidian University,Xi’an 710071,China [3]Testing Center,Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corporation,Chongqing 400060,China

出　　处：《Science China(Information Sciences)》2023年第2期246-251,共6页中国科学（信息科学）（英文版）

基　　金：supported in part by National Science Fund for Distinguished Young Scholars(Grant No.61925404);National Natural Science Foundation of China(Grant No.62074122);Fundamental Research Plan(Grant No.JCKY2020110B010);Major Projects of Shanxi Province(Grant No.20201102012)。

摘　　要：A study of 1.7 kV normally-off p-GaN gate high-electron-mobility transistors(HEMTs)on SiC substrates is presented.The fabricated p-GaN HEMT with a gate-drain spacing LGD=5μm exhibited a threshold voltage of 1.10 V,a maximum drain current of 235 mA/mm,an ON/OFF ratio of 10^(8),and a breakdown voltage of 440 V.Benefiting from the semi-insulating and high-critical-electric-field substrate,the p-GaN HEMT with LGD=23μm achieved the remarkably high breakdown voltage of 1740 V with substrate grounded.This breakdown voltage is very high compared with the reported values for p-GaN HEMTs on silicon substrates with substrate grounded.The vertical breakdown voltage for the p-GaN-on-SiC material exceeded 3 kV with substrate grounded.In addition,the maximum drain current at 500 K was 48%of that at 300 K with a negligible threshold voltage shift.These results indicate the substantial potential of p-GaN gate HEMTs on SiC substrates for high-voltage power applications.

关 键 词：p-GaN gate HEMTS high voltage SiC substrate 

分 类 号：TN386[电子电信—物理电子学]