云南高校图书馆联盟文献共享服务平台- HEMTS

HEMTS: 作品数：152被引量：106H指数：4; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：刘新宇和致经马晓华刘键郝跃更多>>; 相关机构：西安电子科技大学中国科学院微电子研究所电子科技大学中国科学院大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国科学院重点实验室基金西安应用材料创新基金更多>>

短沟道效应出现时InAlN/GaN HEMTs的内部电子分布: 《科技风》2025年第11期43-46,共4页韩铁成彭晓灿; 北华航天工业学院博士基金(BKY-2021-16)。; 凭借二维器件仿真,从器件内部电子分布角度,直观且系统地展示了InAlN/GaN高电子迁移率晶体管直流特性上短沟道效应的发生。结果显示栅长(L_(G))缩短会减小栅极对栅下的电导率调控范围,同时由V_(DS)产生的源漏电场(E_(DS))一定程度上会...; 关键词：InAlN/GaN 高电子迁移率晶体管(HEMTs) 短沟道效应直流特性仿真

Gate leakage mechanisms in Al_(2)O_(3)/SiN/AlN/GaN MIS-HEMTs on Si substrates: 《Chinese Physics B》2025年第4期528-533,共6页Hui-Lin Li Jie-Jie Zhu Ling-Jie Qin Si-Mei Huang Shi-Yang Li Bo-Xuan Gao Qing Zhu Xiao-Hua Ma; Project supported by the National Natural Science Foundation of China(Grant Nos.62188102,62174125,and 62131014).; This study investigates the gate leakage mechanisms of AlN/GaN metal–insulator–semiconductor high-electronmobility transistors(MIS-HEMTs)fabricated on silicon substrate with Al_(2)O_(3)/SiN as stacked gate dielectri...; 关键词：AlN/GaN MIS-HEMTs gate leakage mechanism trap-assisted tunneling(TAT)

Al_(2)O_(3)/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art f_(max)×L_(G): 《Science China(Information Sciences)》2025年第3期403-404,共2页Lingjie QIN Jiejie ZHU Bowen ZHANG Yuxi ZHOU Huantao DUAN Huimei MA Mengdi LI Simei HUANG Jin RAO Xiaohua MA Yue HAO; supported by National Natural Science Foundation of China(Grant Nos.62188102,62174125,62131014)。; Owing to their low cost,large wafer size,and easy heterogeneous integration,GaN-based high-electron-mobility transistors(HEMTs)on silicon substrates have been utilized as superior devices in high-frequency application...; 关键词：AlN/GaN HEMTS COMMUNICATION

Correlation between the whole small recess offset and electrical performance of InP-based HEMTs: 《红外与毫米波学报》2025年第1期40-45,共6页GONG Hang ZHOU Fu-Gui FENG Rui-Ze FENG Zhi-Yu LIU Tong SHI Jing-Yuan SU Yong-Bo JIN Zhi; Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).; In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate proces...; 关键词：InP high-electron-mobility transistor(InP HEMT) INGAAS/INALAS DC/RF characteristic smallsignal modeling double-recessed gate process

A review of GaN RF devices and power amplifiers for 5G communication applications: 《Fundamental Research》2025年第1期315-331,共17页Hao Lu Meng Zhang Ling Yang Bin Hou Rafael Perez Martinez Minhan Mi Jiale Du Longge Deng Mei Wu Srabanti Chowdhury Xiaohua Ma Yue Hao; supported by the National Natural Science Foundation of China(62234009,62090014,62404165,and 62474135);the Natural Science Basic Research Program of Shaanxi(2024JC-YBQN-0611);the Stanford Graduate Fellowship(SGF);the China Postdoctoral Science Foundation(2023M732730);Postdoctoral Fellowship Program of CPSF(GZB20230557);the Fundamental Research Funds for the Central Universities of China(XJSJ23056,XJSJ23047,andZDRC2002).; In the emerging 5G and beyond 5G(B5G)era,the spotlight is sharply focused on the power amplifier,a critical component with stringent specification requirements that dictates the performance of the transmitter.The gall...; 关键词：5G Gallium nitride High frequency High linearity GaN-on-Si HEMTs

西安电子科技大学攻克1200V以上增强型氮化镓电力电子芯片量产技术: 《陕西教育（高教版）》2024年第9期9-9,共1页; 近日,西安电子科技大学广州研究院第三代半导体创新中心郝跃院士、张进成教授课题组李祥东团队在蓝宝石基增强型e-GaN(氮化镓)电力电子芯片量产技术研发方面取得突破性进展。李祥东团队与广东致能科技公司联合攻克了≥1200V超薄GaN缓冲...; 关键词：电子芯片氮化镓阈值电压缓冲层 HEMTS 高硬度材料蓝宝石 GAN

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate: 《Science China(Information Sciences)》2024年第6期457-458,共2页Xiao WANG Zhi-Yu LIN Yuan-Hang SUN Long YUE Yu-Min ZHANG Jian-Feng WANG Ke XU; supported by National Key R&D Program of China(Grant Nos.2022YFB3605402,2022YFB3604301,2022YFB3605200);National Natural Science Foundation of China(Grant No.12274360)。; In the process of homoepitaxy AlGaN/GaN heterojunction by metal-organic chemical vapor deposition(MOCVD)on free-standing substrates,Si impurities from the air and reaction chamber accumulate at the regrowth interface[...; 关键词：ALGAN/GAN HEMTS MOCVD

Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate: 《Journal of Semiconductors》2024年第6期81-86,共6页Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li Qimeng Jiang Xinhua Wang Bin Hou Ling Yang Xiaohua Ma Xinyu Liu; supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics.; Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron g...; 关键词：AlGaN/GaN heterostructure ultrathin-barrier ENHANCEMENT-MODE RADIO-FREQUENCY power added efficiency silicon substrate

电流增益截止频率为441 GHz的InGaAs/InAlAs InP HEMT: 《红外与毫米波学报》2024年第3期329-333,共5页封瑞泽曹书睿冯识谕周福贵刘同苏永波金智; The National Natural Science Foundation of China(61434006)。; 本文设计并制作了fT>400 GHz的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As铟磷高电子迁移率晶体管(InP HEMT)。采用窄栅槽技术优化了寄生电阻。器件栅长为54.4 nm,栅宽为2×50μm。最大漏极电流IDS.max为957 mA/mm,最大跨导gm.max为126...; 关键词：铟磷高电子迁移率晶体管(InP HEMTs) INGAAS/INALAS 电流增益截止频率(f_(T)) 最大振荡频率(f_(max)) 栅槽

首片国产8英寸蓝宝石衬底GaN HEMTs晶圆发布!: 《变频器世界》2024年第4期29-29,共1页; 4月10日,在2024武汉九峰山论坛上,西安37电子科技大学郝跃院士、张进成教授课题组李祥东团队与广东致能科技联合攻关,首次展示了全球首片8英寸蓝宝石基GaN HEMTs晶圆。据李祥东教授在会上介绍,通过调控外延工艺,其GaN外延片不均匀性控制...; 关键词：外延工艺击穿电压 HEMTS 外延片 GaN 电子科技大学晶圆均匀性控制

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